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JANTXV2N3439UA/TR

Microchip Technology
JANTXV2N3439UA/TR Preview
Microchip Technology
TRANS NPN 350V 1A UA
$203.25
Available to order
Reference Price (USD)
1+
$203.25000
500+
$201.2175
1000+
$199.185
1500+
$197.1525
2000+
$195.12
2500+
$193.0875
Exquisite packaging
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Microchip Technology JANTXV2N3439UA/TR is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

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JANTXV2N3439UA/TR

JANTXV2N3439UA/TR

$203.25

Product details

Upgrade your electronic designs with the JANTXV2N3439UA/TR, a high-reliability Bipolar Junction Transistor from Microchip Technology. This single BJT in the Discrete Semiconductor Products range offers exceptional linear amplification characteristics for precision analog circuits. The device features low harmonic distortion and excellent phase response, making it ideal for audio and instrumentation applications. Its robust construction withstands electrical stress and thermal cycling without performance degradation. The JANTXV2N3439UA/TR demonstrates consistent current gain across its operating range, simplifying circuit stabilization. Common uses include microphone preamplifiers, medical monitoring equipment, and precision voltage references. Broadcast systems, laboratory instruments, and high-end audio components benefit from this transistor's clean signal reproduction. Microchip Technology subjects each JANTXV2N3439UA/TR unit to comprehensive electrical testing before shipment. The transistor's lead frame design optimizes thermal dissipation in high-duty-cycle applications. With its combination of technical excellence and manufacturing quality, the JANTXV2N3439UA/TR delivers outstanding value. Contact our sales team through the website inquiry form to discuss your specific requirements and procurement options.

General specs

  • Product Status: Active
  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 1 A
  • Voltage - Collector Emitter Breakdown (Max): 350 V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
  • Current - Collector Cutoff (Max): 2µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
  • Power - Max: 800 mW
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, No Lead
  • Supplier Device Package: UA

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