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MSR2N2369AUB/TR

Microchip Technology
MSR2N2369AUB/TR Preview
Microchip Technology
RH SMALL-SIGNAL BJT
$169.44
Available to order
Reference Price (USD)
1+
$169.44000
500+
$167.7456
1000+
$166.0512
1500+
$164.3568
2000+
$162.6624
2500+
$160.968
Exquisite packaging
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Microchip Technology MSR2N2369AUB/TR is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

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MSR2N2369AUB/TR

MSR2N2369AUB/TR

$169.44

Product details

The MSR2N2369AUB/TR by Microchip Technology sets new standards in single Bipolar Junction Transistor performance within the Discrete Semiconductor Products category. This BJT features enhanced carrier mobility for improved switching speeds and reduced transition losses. Its optimized doping profile minimizes unwanted capacitance effects in high-frequency operation. The transistor maintains stable characteristics under varying load conditions, ensuring dependable circuit behavior. Designers appreciate its wide safe operating area for robust performance in demanding applications. The MSR2N2369AUB/TR commonly appears in power conversion systems, analog computation circuits, and signal amplification stages. Renewable energy inverters, robotics controllers, and wireless charging systems frequently incorporate this component. Military-grade reliability and automotive qualification options are available for critical applications. Microchip Technology's commitment to innovation is evident in the MSR2N2369AUB/TR's advanced architecture and manufacturing precision. The transistor ships in industry-standard packaging compatible with automated placement equipment. Explore the technical advantages of this BJT by requesting samples or a personalized quote through our online procurement platform.

General specs

  • Product Status: Active
  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): -
  • Voltage - Collector Emitter Breakdown (Max): 15 V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 3mA, 30mA
  • Current - Collector Cutoff (Max): 400nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 1V
  • Power - Max: 360 mW
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 3-SMD, No Lead
  • Supplier Device Package: UB

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