JANSR2N3810U/TR
Microchip Technology
Microchip Technology
TRANSISTOR DUAL RH SMALL-SIGNAL
$270.39
Available to order
Reference Price (USD)
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$270.39000
500+
$267.6861
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$264.9822
1500+
$262.2783
2000+
$259.5744
2500+
$256.8705
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JANSR2N3810U/TR
$270.39
Product details
The JANSR2N3810U/TR from Microchip Technology redefines performance in the Bipolar Junction Transistor (BJT) Arrays category of Discrete Semiconductor Products. This innovative component integrates multiple transistors with precisely matched characteristics for coordinated circuit operation. Engineered for excellence, it offers superior current handling and thermal performance. The JANSR2N3810U/TR features minimal parameter spread across all transistors in the array. Its advanced construction ensures reliable operation in high-frequency applications. The product demonstrates excellent stability over extended operational periods. With its low saturation voltage characteristics, it enhances overall system efficiency. The JANSR2N3810U/TR is particularly suited for applications requiring multiple synchronized switching elements. Power management systems benefit from its precise current regulation capabilities. Signal processing equipment utilizes its matched characteristics for balanced amplification. Renewable energy inverters employ it for efficient power conversion. The JANSR2N3810U/TR also plays vital roles in advanced communication systems. Microchip Technology has incorporated cutting-edge semiconductor technology in its production. The component's design supports both through-hole and surface-mount assembly processes. It complies with international standards for quality and environmental safety. Engineers appreciate its consistent performance across temperature variations. The JANSR2N3810U/TR represents an optimal solution for demanding electronic applications. Learn more about its specifications and availability by contacting our sales team through our website.
General specs
- Product Status: Active
- Transistor Type: 2 PNP (Dual)
- Current - Collector (Ic) (Max): 50mA
- Voltage - Collector Emitter Breakdown (Max): 60V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 100µA
- Current - Collector Cutoff (Max): 10µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
- Power - Max: 350mW
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-SMD, No Lead
- Supplier Device Package: 6-SMD
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