HN1B04FE-Y,LF
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
TRANS NPN/PNP 50V 0.15A ES6
$0.31
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4,000+
$0.05313
8,000+
$0.04620
12,000+
$0.03927
28,000+
$0.03696
100,000+
$0.03080
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HN1B04FE-Y,LF
$0.31
Product details
Toshiba Semiconductor and Storage's HN1B04FE-Y,LF represents the pinnacle of Bipolar Junction Transistor (BJT) Array technology within Discrete Semiconductor Products. This innovative solution combines multiple transistors in a single package, optimized for synchronized operation. The HN1B04FE-Y,LF delivers exceptional current handling capacity with minimal voltage drop across junctions. Its symmetrical design ensures identical performance characteristics for all included transistors. The product features enhanced electrostatic discharge protection for improved reliability. With its wide operating temperature range, it performs consistently in diverse environments. The HN1B04FE-Y,LF is particularly valuable for applications requiring matched transistor pairs or groups. Its low saturation voltage contributes to energy-efficient circuit designs. This BJT Array demonstrates excellent frequency response for high-speed applications. Common applications include precision voltage regulators in power supply units. Audio processing equipment benefits from its low distortion characteristics. Test and measurement instruments utilize its stable parameters for accurate readings. The HN1B04FE-Y,LF also serves critical functions in aerospace electronics systems. Toshiba Semiconductor and Storage has engineered this product to meet rigorous industry standards for quality and performance. Its lead-free construction complies with modern environmental regulations. For engineers seeking reliable, high-performance transistor arrays, the HN1B04FE-Y,LF offers an optimal solution. Visit our website to submit your inquiry about this versatile semiconductor component today.
General specs
- Product Status: Active
- Transistor Type: NPN, PNP
- Current - Collector (Ic) (Max): 150mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
- Power - Max: 100mW
- Frequency - Transition: 80MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: ES6
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