JANHCA2N3810
Microchip Technology
Microchip Technology
TRANSISTOR SMALL-SIGNAL BJT
$33.54
Available to order
Reference Price (USD)
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$33.54000
500+
$33.2046
1000+
$32.8692
1500+
$32.5338
2000+
$32.1984
2500+
$31.863
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JANHCA2N3810
$33.54
Product details
Microchip Technology's JANHCA2N3810 represents the pinnacle of Bipolar Junction Transistor (BJT) Array technology within Discrete Semiconductor Products. This innovative solution combines multiple transistors in a single package, optimized for synchronized operation. The JANHCA2N3810 delivers exceptional current handling capacity with minimal voltage drop across junctions. Its symmetrical design ensures identical performance characteristics for all included transistors. The product features enhanced electrostatic discharge protection for improved reliability. With its wide operating temperature range, it performs consistently in diverse environments. The JANHCA2N3810 is particularly valuable for applications requiring matched transistor pairs or groups. Its low saturation voltage contributes to energy-efficient circuit designs. This BJT Array demonstrates excellent frequency response for high-speed applications. Common applications include precision voltage regulators in power supply units. Audio processing equipment benefits from its low distortion characteristics. Test and measurement instruments utilize its stable parameters for accurate readings. The JANHCA2N3810 also serves critical functions in aerospace electronics systems. Microchip Technology has engineered this product to meet rigorous industry standards for quality and performance. Its lead-free construction complies with modern environmental regulations. For engineers seeking reliable, high-performance transistor arrays, the JANHCA2N3810 offers an optimal solution. Visit our website to submit your inquiry about this versatile semiconductor component today.
General specs
- Product Status: Active
- Transistor Type: 2 PNP (Dual)
- Current - Collector (Ic) (Max): 50mA
- Voltage - Collector Emitter Breakdown (Max): 60V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
- Current - Collector Cutoff (Max): 10µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
- Power - Max: 350mW
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-78-6 Metal Can
- Supplier Device Package: TO-78-6
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