ZXTC6717MCQTA
Diodes Incorporated
Diodes Incorporated
SS LOW SAT TRANSISTOR U-DFN3020-
$0.41
Available to order
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$0.40986
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$0.40572
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2000+
$0.39744
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$0.3933
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ZXTC6717MCQTA
$0.41
Product details
The ZXTC6717MCQTA from Diodes Incorporated redefines performance in the Bipolar Junction Transistor (BJT) Arrays category of Discrete Semiconductor Products. This innovative component integrates multiple transistors with precisely matched characteristics for coordinated circuit operation. Engineered for excellence, it offers superior current handling and thermal performance. The ZXTC6717MCQTA features minimal parameter spread across all transistors in the array. Its advanced construction ensures reliable operation in high-frequency applications. The product demonstrates excellent stability over extended operational periods. With its low saturation voltage characteristics, it enhances overall system efficiency. The ZXTC6717MCQTA is particularly suited for applications requiring multiple synchronized switching elements. Power management systems benefit from its precise current regulation capabilities. Signal processing equipment utilizes its matched characteristics for balanced amplification. Renewable energy inverters employ it for efficient power conversion. The ZXTC6717MCQTA also plays vital roles in advanced communication systems. Diodes Incorporated has incorporated cutting-edge semiconductor technology in its production. The component's design supports both through-hole and surface-mount assembly processes. It complies with international standards for quality and environmental safety. Engineers appreciate its consistent performance across temperature variations. The ZXTC6717MCQTA represents an optimal solution for demanding electronic applications. Learn more about its specifications and availability by contacting our sales team through our website.
General specs
- Product Status: Active
- Transistor Type: NPN, PNP Complementary
- Current - Collector (Ic) (Max): 4.5A, 4A
- Voltage - Collector Emitter Breakdown (Max): 15V, 12V
- Vce Saturation (Max) @ Ib, Ic: 310mV @ 50mA, 4.5A, 310mV @ 150mA, 4A
- Current - Collector Cutoff (Max): 100nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 200mA, 2V, 300 @ 100mA, 2V
- Power - Max: 1.13W
- Frequency - Transition: 120MHz, 110MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-VDFN Exposed Pad
- Supplier Device Package: W-DFN3020-8
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