Shopping cart

Subtotal: $0.00

APT10M19BVRG

Microchip Technology
APT10M19BVRG Preview
Microchip Technology
MOSFET N-CH 100V 75A TO247
$12.63
Available to order
Reference Price (USD)
1+
$12.62800
500+
$12.50172
1000+
$12.37544
1500+
$12.24916
2000+
$12.12288
2500+
$11.9966
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

DHL / Fedex / UPS 2-5 days
TNT 2-6 days
EMS 3-7 days

Microchip Technology APT10M19BVRG is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

Experience hassle-free transactions with our flexible payment options and credit facilities. Learn more about the various payment methods accepted, installment plans, and any exclusive credit offers available to make your shopping experience seamless.
APT10M19BVRG

APT10M19BVRG

$12.63

Product details

Microchip Technology presents the APT10M19BVRG, a high-efficiency single MOSFET transistor that excels in the Discrete Semiconductor Products category (Transistors - FETs, MOSFETs - Single). This component combines innovative semiconductor technology with practical design features to deliver superior performance in power management applications. The APT10M19BVRG offers significant advantages including optimized switching behavior, reduced conduction losses, and enhanced thermal performance. These characteristics translate to improved system efficiency and reliability in your electronic designs. The MOSFET is particularly effective in medical imaging equipment, laboratory instrumentation, and diagnostic devices where precision power control is essential. Industrial applications benefit from its use in CNC machinery, packaging systems, and material handling equipment. For the energy sector, it's ideal for smart grid components and power monitoring systems. The APT10M19BVRG also performs exceptionally in professional lighting systems and advanced HVAC controls. With its robust construction and electrical efficiency, this component provides design engineers with a reliable solution for diverse power switching requirements. Interested in incorporating this high-performance MOSFET into your designs? Submit your inquiry through our online platform to receive comprehensive product details, technical support, and competitive pricing information from our expert team.

General specs

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Rds On (Max) @ Id, Vgs: 19mOhm @ 500mA, 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
  • Vgs (Max): -
  • Input Capacitance (Ciss) (Max) @ Vds: 6120 pF @ 25 V
  • FET Feature: -
  • Power Dissipation (Max): -
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247 [B]
  • Package / Case: TO-247-3

Viewed products

STMicroelectronics

STFU16N65M2

$0.00 (not set)
Infineon Technologies

IPA086N10N3GXKSA1

$0.00 (not set)
Renesas Electronics America Inc

NP83P04PDG-E1-AY

$0.00 (not set)
Alpha & Omega Semiconductor Inc.

AOTF42S60L

$0.00 (not set)
IXYS

IXTA3N100D2-TRL

$0.00 (not set)
Harris Corporation

IRFR321

$0.00 (not set)
Rectron USA

RM120N60T2

$0.00 (not set)
Nexperia USA Inc.

PMZ1200UPEYL

$0.00 (not set)
IXYS

IXTL2N470

$0.00 (not set)
Vishay Siliconix

SIE808DF-T1-GE3

$0.00 (not set)
Top