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SIE808DF-T1-GE3

Vishay Siliconix
SIE808DF-T1-GE3 Preview
Vishay Siliconix
MOSFET N-CH 20V 60A 10POLARPAK
$2.36
Available to order
Reference Price (USD)
3,000+
$2.09209
Exquisite packaging
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Vishay Siliconix SIE808DF-T1-GE3 is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

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SIE808DF-T1-GE3

SIE808DF-T1-GE3

$2.36

Product details

General specs

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 1.6mOhm @ 25A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 8800 pF @ 10 V
  • FET Feature: -
  • Power Dissipation (Max): 5.2W (Ta), 125W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 10-PolarPAK® (L)
  • Package / Case: 10-PolarPAK® (L)

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