Shopping cart

Subtotal: $0.00

2N2907AE3

Microchip Technology
2N2907AE3 Preview
Microchip Technology
TRANS PNP 60V 0.6A TO18
$4.17
Available to order
Reference Price (USD)
1+
$4.17000
500+
$4.1283
1000+
$4.0866
1500+
$4.0449
2000+
$4.0032
2500+
$3.9615
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

DHL / Fedex / UPS 2-5 days
TNT 2-6 days
EMS 3-7 days

Microchip Technology 2N2907AE3 is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

Experience hassle-free transactions with our flexible payment options and credit facilities. Learn more about the various payment methods accepted, installment plans, and any exclusive credit offers available to make your shopping experience seamless.
2N2907AE3

2N2907AE3

$4.17

Product details

Optimize your circuit performance with the 2N2907AE3, a precision Bipolar Junction Transistor from Microchip Technology. This single BJT in the Discrete Semiconductor Products lineup delivers exceptional gain bandwidth product for high-frequency applications. The transistor's low base-emitter voltage requirement enhances energy efficiency in battery-powered devices. Its symmetrical current handling capabilities support bidirectional circuit designs when needed. The 2N2907AE3 exhibits excellent parameter matching, crucial for differential amplifier stages. Typical implementations include sensor interfaces, signal conditioning circuits, and pulse generators. Aerospace systems, marine electronics, and scientific instrumentation benefit from this BJT's reliable operation. The component undergoes rigorous testing for parameter stability and long-term reliability. Its moisture-resistant packaging ensures performance in humid environments. Microchip Technology employs state-of-the-art fabrication techniques to maintain consistent quality across production runs. The 2N2907AE3 combines cutting-edge semiconductor technology with practical design features. For detailed specifications and purchasing information, complete our online contact form to connect with a product specialist.

General specs

  • Product Status: Active
  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 600 mA
  • Voltage - Collector Emitter Breakdown (Max): 60 V
  • Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 50nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
  • Power - Max: 500 mW
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-206AA, TO-18-3 Metal Can
  • Supplier Device Package: TO-18

Viewed products

onsemi

2SC3467E-AE

$0.00 (not set)
onsemi

2SC5658RM3T5G

$0.00 (not set)
onsemi

FJL4215OTU

$0.00 (not set)
STMicroelectronics

2ST31A

$0.00 (not set)
Diodes Incorporated

BCW66HQTA

$0.00 (not set)
Rohm Semiconductor

2SD2653KT146

$0.00 (not set)
Fairchild Semiconductor

KST3904MTF

$0.00 (not set)
Microchip Technology

2N3762L

$0.00 (not set)
Solid State Inc.

MJ10005

$0.00 (not set)
Microchip Technology

JAN2N4150

$0.00 (not set)
Top