BCW66HQTA
Diodes Incorporated
Diodes Incorporated
TRANS NPN 45V 0.8A SOT23-3
$0.10
Available to order
Reference Price (USD)
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$0.10017
500+
$0.0991683
1000+
$0.0981666
1500+
$0.0971649
2000+
$0.0961632
2500+
$0.0951615
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BCW66HQTA
$0.10
Product details
The BCW66HQTA from Diodes Incorporated is a high-performance Bipolar Junction Transistor (BJT) designed for reliable amplification and switching applications. As part of the Discrete Semiconductor Products category, this single BJT transistor delivers exceptional efficiency and durability. Its robust construction ensures stable operation under varying electrical conditions, making it a versatile choice for engineers and designers. Whether you're working on low-power circuits or high-frequency applications, the BCW66HQTA offers consistent performance with minimal distortion. The transistor's compact design allows for easy integration into various circuit layouts, saving valuable board space. With its excellent thermal stability and low noise characteristics, this BJT is ideal for precision electronic systems. Upgrade your projects with the BCW66HQTA and experience superior signal processing capabilities. For pricing and availability, submit an inquiry today to explore how this transistor can enhance your designs.
General specs
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 800 mA
- Voltage - Collector Emitter Breakdown (Max): 45 V
- Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 20nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V
- Power - Max: 310 mW
- Frequency - Transition: 100MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3
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