LS350 DIE
Linear Integrated Systems, Inc.
Linear Integrated Systems, Inc.
TIGHTLY MATCHED, MONOLITHIC DUAL
$3.61
Available to order
Reference Price (USD)
1+
$3.61000
500+
$3.5739
1000+
$3.5378
1500+
$3.5017
2000+
$3.4656
2500+
$3.4295
Exquisite packaging
Discount
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| EMS | 3-7 days |
Linear Integrated Systems, Inc. LS350 DIE is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
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LS350 DIE
$3.61
Product details
Linear Integrated Systems, Inc.'s LS350 DIE represents a high-performance solution in Bipolar Junction Transistor (BJT) Arrays for Discrete Semiconductor Products. This advanced component integrates multiple transistors with precisely matched characteristics in a compact package. The LS350 DIE delivers excellent current handling capacity with uniform performance across all elements. Its design emphasizes thermal stability and parameter consistency. The product features low noise operation for sensitive signal processing applications. With its high current gain, it ensures efficient circuit operation. The LS350 DIE demonstrates reliable switching characteristics for diverse electronic systems. Medical diagnostic equipment benefits from its precise signal amplification. Consumer electronics utilize its space-saving design for compact devices. Industrial control systems employ its robust performance in harsh environments. The LS350 DIE also serves critical functions in power distribution systems. Linear Integrated Systems, Inc. has implemented stringent quality control measures in production. The component's design facilitates optimal thermal management during operation. Its lead-free composition complies with global environmental regulations. Engineers value its consistent performance in both prototype and mass production scenarios. The LS350 DIE offers a reliable solution for demanding electronic applications. Its versatility makes it suitable for various circuit design requirements. Contact us today through our online portal to inquire about pricing and availability for your projects.
General specs
- Product Status: Active
- Transistor Type: 2 PNP (Dual)
- Current - Collector (Ic) (Max): 10mA
- Voltage - Collector Emitter Breakdown (Max): 25V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 100µA, 1mA
- Current - Collector Cutoff (Max): 200pA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
- Power - Max: 500mW
- Frequency - Transition: 200MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Die
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