Shopping cart

Subtotal: $0.00

IMT4T108

Rohm Semiconductor
IMT4T108 Preview
Rohm Semiconductor
TRANS 2PNP 120V 0.05A 6SMT
$0.39
Available to order
Reference Price (USD)
3,000+
$0.09810
6,000+
$0.09265
15,000+
$0.08448
30,000+
$0.07903
75,000+
$0.07630
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

DHL / Fedex / UPS 2-5 days
TNT 2-6 days
EMS 3-7 days

Rohm Semiconductor IMT4T108 is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

Experience hassle-free transactions with our flexible payment options and credit facilities. Learn more about the various payment methods accepted, installment plans, and any exclusive credit offers available to make your shopping experience seamless.
IMT4T108

IMT4T108

$0.39

Product details

Discover the engineering excellence of Rohm Semiconductor's IMT4T108, a premier Bipolar Junction Transistor (BJT) Array in the Discrete Semiconductor Products category. This advanced component integrates multiple transistors with matched characteristics for precision circuit applications. The IMT4T108 offers outstanding current handling capacity with excellent thermal properties. Its design ensures parameter consistency across all transistors in the array. The product features low saturation voltage for enhanced energy efficiency in operation. With its high-frequency response, it suits demanding switching applications. The IMT4T108 maintains stable performance across wide temperature ranges. Its compact form factor supports space-constrained design requirements. Audio amplification systems benefit from its low distortion characteristics. Power supply circuits utilize its reliable switching performance. Sensor interface electronics employ its precise current amplification. The IMT4T108 also serves critical functions in automotive control modules. Rohm Semiconductor has applied rigorous testing procedures to guarantee product reliability. The component's construction allows for effective thermal management in operation. Its design complies with international standards for quality and safety. Engineers value its consistent performance in both prototype and production environments. The IMT4T108 represents a versatile solution for diverse electronic applications. To learn more about this high-performance BJT Array, submit your inquiry through our website today.

General specs

  • Product Status: Active
  • Transistor Type: 2 PNP (Dual)
  • Current - Collector (Ic) (Max): 50mA
  • Voltage - Collector Emitter Breakdown (Max): 120V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max): 500nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 6V
  • Power - Max: 300mW
  • Frequency - Transition: 140MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-74, SOT-457
  • Supplier Device Package: SMT6

Viewed products

Microchip Technology

JAN2N5796

$0.00 (not set)
Diodes Incorporated

MMDT2222V-7

$0.00 (not set)
onsemi

SSVBC846BPDW1T1G

$0.00 (not set)
Nexperia USA Inc.

PUMT1,115

$0.00 (not set)
Micro Commercial Co

BC847BS-TP

$0.00 (not set)
onsemi

BC847BPDW1T1G

$0.00 (not set)
Microchip Technology

JAN2N2920

$0.00 (not set)
Nexperia USA Inc.

BC846S,125

$0.00 (not set)
Microchip Technology

2N6987

$0.00 (not set)
Nexperia USA Inc.

PBSS5255PAPSX

$0.00 (not set)
Top