IXXX200N65B4
IXYS
IXYS
IGBT 650V 370A 1150W PLUS247
$21.87
Available to order
Reference Price (USD)
1+
$18.55000
10+
$16.86300
30+
$15.59833
120+
$14.33358
270+
$13.06881
510+
$12.22567
Exquisite packaging
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IXXX200N65B4
$21.87
Product details
The IXXX200N65B4 from IXYS is a high-performance single IGBT transistor designed for efficient power management in industrial applications. This discrete semiconductor product offers robust switching capabilities and thermal stability, making it ideal for demanding environments. With its advanced design, the IXXX200N65B4 ensures minimal energy loss and enhanced reliability, catering to a wide range of power electronics needs. Whether you're designing motor drives, power supplies, or renewable energy systems, this IGBT transistor delivers consistent performance under varying load conditions. Its compact form factor and ease of integration further simplify your design process. Explore the versatility of the IXXX200N65B4 and elevate your power management solutions today. For pricing and availability, submit an inquiry online.
General specs
- Product Status: Active
- IGBT Type: PT
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 370 A
- Current - Collector Pulsed (Icm): 1000 A
- Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 160A
- Power - Max: 1150 W
- Switching Energy: 4.4mJ (on), 2.2mJ (off)
- Input Type: Standard
- Gate Charge: 553 nC
- Td (on/off) @ 25°C: 62ns/245ns
- Test Condition: 400V, 100A, 1Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3 Variant
- Supplier Device Package: PLUS247™-3
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