IKZ50N65ES5XKSA1
Infineon Technologies
Infineon Technologies
IGBT TRENCH 650V 80A TO247-4
$7.04
Available to order
Reference Price (USD)
1+
$6.51000
10+
$5.85100
240+
$4.79400
720+
$4.08106
1,200+
$3.44186
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IKZ50N65ES5XKSA1
$7.04
Product details
Experience unparalleled power control with the IKZ50N65ES5XKSA1 single IGBT transistor by Infineon Technologies. This high-efficiency component is perfect for applications in industrial automation, renewable energy, and automotive systems. The IKZ50N65ES5XKSA1 boasts low energy loss and high switching frequency, making it a top choice for modern power electronics. Its robust design ensures long-term reliability even under high stress and temperature variations. Whether you're designing for high-power or compact systems, the IKZ50N65ES5XKSA1 offers the flexibility and performance you need. Submit your inquiry online to learn more about this advanced IGBT transistor.
General specs
- Product Status: Active
- IGBT Type: Trench
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 80 A
- Current - Collector Pulsed (Icm): 200 A
- Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 50A
- Power - Max: 274 W
- Switching Energy: 770µJ (on), 880µJ (off)
- Input Type: Standard
- Gate Charge: 120 nC
- Td (on/off) @ 25°C: 36ns/294ns
- Test Condition: 400V, 25A, 23.1Ohm, 15V
- Reverse Recovery Time (trr): 62 ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-4
- Supplier Device Package: PG-TO247-4
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