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IXTX6N200P3HV

IXYS
IXTX6N200P3HV Preview
IXYS
MOSFET N-CH 2000V 6A TO247PLUSHV
$69.96
Available to order
Reference Price (USD)
1+
$51.25000
30+
$44.32000
120+
$41.55000
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IXTX6N200P3HV

IXTX6N200P3HV

$69.96

Product details

General specs

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 2000 V
  • Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 4Ohm @ 3A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 10 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 25 V
  • FET Feature: -
  • Power Dissipation (Max): 960W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247PLUS-HV
  • Package / Case: TO-247-3 Variant

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