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IXTK120N65X2

IXYS
IXTK120N65X2 Preview
IXYS
MOSFET N-CH 650V 120A TO264
$23.87
Available to order
Reference Price (USD)
1+
$17.78000
25+
$14.94800
100+
$13.73600
500+
$11.71600
Exquisite packaging
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IXTK120N65X2

IXTK120N65X2

$23.87

Product details

General specs

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 24mOhm @ 60A, 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 8mA
  • Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 13600 pF @ 25 V
  • FET Feature: -
  • Power Dissipation (Max): 1250W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-264 (IXTK)
  • Package / Case: TO-264-3, TO-264AA

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