YJQ55P02A-F1-1100HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
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Yangzhou Yangjie Electronic Technology Co.,Ltd
P-CH MOSFET 20V 55A DFN3333-8L
$0.67
Available to order
Reference Price (USD)
1+
$0.67000
500+
$0.6633
1000+
$0.6566
1500+
$0.6499
2000+
$0.6432
2500+
$0.6365
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TNT | 2-6 days |
EMS | 3-7 days |
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Product details
General specs
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 55A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs: 8.3mOhm @ 15A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 12.7 nC @ 10 V
- Vgs (Max): ±10V
- Input Capacitance (Ciss) (Max) @ Vds: 6358 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 3.2W (Ta), 38W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-DFN (3.3x3.3)
- Package / Case: 8-PowerVDFN