IXTA1R6N100D2
IXYS
IXYS
MOSFET N-CH 1000V 1.6A TO263
$3.16
Available to order
Reference Price (USD)
1+
$2.42000
50+
$1.95000
100+
$1.75500
500+
$1.36500
1,000+
$1.13100
2,500+
$1.09200
Exquisite packaging
Discount
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| EMS | 3-7 days |
IXYS IXTA1R6N100D2 is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
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IXTA1R6N100D2
$3.16
Product details
General specs
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 1000 V
- Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 10Ohm @ 800mA, 0V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 5 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 645 pF @ 25 V
- FET Feature: Depletion Mode
- Power Dissipation (Max): 100W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263AA
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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