2SK1835-E
Renesas Electronics America Inc
Renesas Electronics America Inc
MOSFET N-CH 1500V 4A TO3P
$7.85
Available to order
Reference Price (USD)
1+
$7.50000
30+
$6.15000
120+
$5.55000
510+
$4.65000
1,020+
$4.20000
Exquisite packaging
Discount
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2SK1835-E
$7.85
Product details
General specs
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 1500 V
- Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 15V
- Rds On (Max) @ Id, Vgs: 7Ohm @ 2A, 15V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 125W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-3P
- Package / Case: TO-220-3 Full Pack
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