IXFR32N100P
IXYS
IXYS
MOSFET N-CH 1000V 18A ISOPLUS247
$21.99
Available to order
Reference Price (USD)
30+
$15.63267
Exquisite packaging
Discount
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IXFR32N100P
$21.99
Product details
General specs
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 1000 V
- Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 340mOhm @ 16A, 10V
- Vgs(th) (Max) @ Id: 6.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 14200 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 320W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: ISOPLUS247™
- Package / Case: TO-247-3
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