BTS282ZE3180AATMA2
Infineon Technologies
Infineon Technologies
MOSFET N-CH 49V 80A TO263-7
$7.25
Available to order
Reference Price (USD)
1,000+
$2.97605
2,000+
$2.82725
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BTS282ZE3180AATMA2
$7.25
Product details
The BTS282ZE3180AATMA2 from Infineon Technologies is a high-performance single MOSFET transistor designed for efficient power management in various electronic applications. This Discrete Semiconductor Product belongs to the Transistors - FETs, MOSFETs - Single category, offering reliable switching capabilities and low power dissipation. Ideal for both industrial and consumer electronics, this component ensures optimal performance in demanding environments. With its advanced design, the BTS282ZE3180AATMA2 provides enhanced thermal stability and durability, making it a preferred choice for engineers and designers. Whether you're developing power supplies, motor controls, or audio amplifiers, this MOSFET delivers consistent results. Key features include fast switching speeds, low on-resistance, and excellent thermal characteristics. These attributes contribute to improved energy efficiency and reduced heat generation in your circuits. The BTS282ZE3180AATMA2 finds applications in automotive systems, renewable energy solutions, and industrial automation equipment. For power inverters, battery management systems, or LED drivers, this component offers the reliability you need. Upgrade your designs with the BTS282ZE3180AATMA2 and experience superior performance. Contact us today for pricing and availability submit your inquiry online to get started!
General specs
- Product Status: Not For New Designs
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 49 V
- Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 6.5mOhm @ 36A, 10V
- Vgs(th) (Max) @ Id: 2V @ 240µA
- Gate Charge (Qg) (Max) @ Vgs: 232 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V
- FET Feature: Temperature Sensing Diode
- Power Dissipation (Max): 300W (Tc)
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO263-7-1
- Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
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