IXFB110N60P3
IXYS
IXYS
MOSFET N-CH 600V 110A PLUS264
$24.46
Available to order
Reference Price (USD)
1+
$18.22000
25+
$15.31800
100+
$14.07600
500+
$12.00600
Exquisite packaging
Discount
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| EMS | 3-7 days |
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IXFB110N60P3
$24.46
Product details
General specs
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 56mOhm @ 55A, 10V
- Vgs(th) (Max) @ Id: 5V @ 8mA
- Gate Charge (Qg) (Max) @ Vgs: 245 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 18000 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 1890W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PLUS264™
- Package / Case: TO-264-3, TO-264AA
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