IRF6645TRPBF
Infineon Technologies
Infineon Technologies
MOSFET N-CH 100V 5.7A DIRECTFET
$2.08
Available to order
Reference Price (USD)
4,800+
$0.68088
9,600+
$0.65528
Exquisite packaging
Discount
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| EMS | 3-7 days |
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IRF6645TRPBF
$2.08
Product details
General specs
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta), 25A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 35mOhm @ 5.7A, 10V
- Vgs(th) (Max) @ Id: 4.9V @ 50µA
- Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 2.2W (Ta), 42W (Tc)
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DIRECTFET™ SJ
- Package / Case: DirectFET™ Isometric SJ
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