IV1Q12050T3
Inventchip
Inventchip
SIC MOSFET, 1200V 50MOHM, TO-247
$39.28
Available to order
Reference Price (USD)
1+
$39.28000
500+
$38.8872
1000+
$38.4944
1500+
$38.1016
2000+
$37.7088
2500+
$37.316
Exquisite packaging
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IV1Q12050T3
$39.28
Product details
General specs
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 20V
- Rds On (Max) @ Id, Vgs: 65mOhm @ 20A, 20V
- Vgs(th) (Max) @ Id: 3.2V @ 6mA
- Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 20 V
- Vgs (Max): +20V, -5V
- Input Capacitance (Ciss) (Max) @ Vds: 2770 pF @ 800 V
- FET Feature: -
- Power Dissipation (Max): 327W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-3
- Package / Case: TO-247-3
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