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NVBG160N120SC1

onsemi
NVBG160N120SC1 Preview
onsemi
SICFET N-CH 1200V 19.5A D2PAK
$11.36
Available to order
Reference Price (USD)
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$11.36000
500+
$11.2464
1000+
$11.1328
1500+
$11.0192
2000+
$10.9056
2500+
$10.792
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NVBG160N120SC1

NVBG160N120SC1

$11.36

Product details

General specs

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 1200 V
  • Current - Continuous Drain (Id) @ 25°C: 19.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 20V
  • Rds On (Max) @ Id, Vgs: 224mOhm @ 12A, 20V
  • Vgs(th) (Max) @ Id: 4.3V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 33.8 nC @ 20 V
  • Vgs (Max): +25V, -15V
  • Input Capacitance (Ciss) (Max) @ Vds: 678 pF @ 800 V
  • FET Feature: -
  • Power Dissipation (Max): 136W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK-7
  • Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA

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