IV1D06006P3
Inventchip
Inventchip
SIC DIODE, 650V 6A, DPAK
$4.52
Available to order
Reference Price (USD)
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$4.52000
500+
$4.4748
1000+
$4.4296
1500+
$4.3844
2000+
$4.3392
2500+
$4.294
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IV1D06006P3
$4.52
Product details
Experience superior rectification performance with the IV1D06006P3 single diode from Inventchip, engineered for excellence in power electronics. This component offers an optimal balance between forward voltage characteristics and reverse leakage current, ensuring efficient energy conversion. The diode's advanced construction provides excellent thermal stability and long-term reliability in continuous operation. Designers will appreciate its versatility in applications ranging from consumer appliances to industrial power systems. The IV1D06006P3 performs exceptionally well in UPS systems, electric vehicle power trains, and renewable energy converters. Its robust design withstands electrical transients and mechanical stress, making it ideal for transportation and infrastructure applications. Additional benefits include consistent batch-to-batch performance and compatibility with automated assembly processes. For engineers seeking a reliable rectification solution, the IV1D06006P3 delivers outstanding results. Contact us today to learn more about this high-performance diode and its applications.
General specs
- Product Status: Active
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 650 V
- Current - Average Rectified (Io): 16.7A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 6 A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0 ns
- Current - Reverse Leakage @ Vr: 10 µA @ 650 V
- Capacitance @ Vr, F: 224pF @ 1V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: TO-252-3
- Operating Temperature - Junction: -55°C ~ 175°C
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