VS-ETH0806-M3
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 8A TO220-2
$1.16
Available to order
Reference Price (USD)
1+
$1.12000
10+
$1.01400
100+
$0.80680
500+
$0.67926
1,000+
$0.55170
2,500+
$0.51981
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VS-ETH0806-M3
$1.16
Product details
General specs
- Product Status: Active
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600 V
- Current - Average Rectified (Io): 8A
- Voltage - Forward (Vf) (Max) @ If: 2.65 V @ 8 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 21 ns
- Current - Reverse Leakage @ Vr: 12 µA @ 600 V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: TO-220AC
- Operating Temperature - Junction: -65°C ~ 175°C
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