IRFZ44NLPBF
Infineon Technologies

Infineon Technologies
MOSFET N-CH 55V 49A TO262
$1.84
Available to order
Reference Price (USD)
1+
$1.75000
10+
$1.56100
100+
$1.25150
500+
$0.98906
1,000+
$0.79819
Exquisite packaging
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Product details
General specs
- Product Status: Not For New Designs
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55 V
- Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 17.5mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1470 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 3.8W (Ta), 94W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-262
- Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA