Shopping cart

Subtotal: $0.00

BUK7E1R6-30E,127

NXP USA Inc.
BUK7E1R6-30E,127 Preview
NXP USA Inc.
MOSFET N-CH 30V 120A I2PAK
$1.22
Available to order
Reference Price (USD)
1+
$1.22000
500+
$1.2078
1000+
$1.1956
1500+
$1.1834
2000+
$1.1712
2500+
$1.159
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

DHL / Fedex / UPS 2-5 days
TNT 2-6 days
EMS 3-7 days

NXP USA Inc. BUK7E1R6-30E,127 is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

Experience hassle-free transactions with our flexible payment options and credit facilities. Learn more about the various payment methods accepted, installment plans, and any exclusive credit offers available to make your shopping experience seamless.
BUK7E1R6-30E,127

BUK7E1R6-30E,127

$1.22

Product details

NXP USA Inc.'s BUK7E1R6-30E,127 stands out in the Discrete Semiconductor Products market as a top-tier single MOSFET transistor in the Transistors - FETs, MOSFETs - Single segment. This component combines cutting-edge semiconductor technology with practical design features for superior electrical performance. The BUK7E1R6-30E,127 demonstrates exceptional characteristics including low gate charge, excellent switching behavior, and reliable overcurrent protection. These features translate to reduced power losses and extended device lifespan in your applications. The transistor's robust construction ensures stable operation in challenging environmental conditions, from temperature extremes to mechanical stress. Industrial engineers will appreciate its versatility in robotics control systems, welding equipment, and power tool applications. For consumer electronics, it's perfect for high-end audio systems, gaming consoles, and smart home devices. The BUK7E1R6-30E,127 also performs exceptionally in renewable energy applications such as solar inverters and wind turbine controls. With its balanced performance metrics, this MOSFET provides the ideal solution for your power management needs. Ready to incorporate this high-quality component into your designs? Submit your inquiry through our user-friendly online platform for quick response and competitive pricing options.

General specs

  • Product Status: Obsolete
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 1.6mOhm @ 25A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 154 nC @ 10 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 11960 pF @ 25 V
  • FET Feature: -
  • Power Dissipation (Max): 349W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I2PAK
  • Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA

Viewed products

IXYS

IXTP120P065T

$0.00 (not set)
onsemi

NTMTS0D7N04CTXG

$0.00 (not set)
Fairchild Semiconductor

IRFW730BTM

$0.00 (not set)
STMicroelectronics

STD12N60DM6

$0.00 (not set)
IXYS

IXTP100N15X4

$0.00 (not set)
Linear Integrated Systems, Inc.

3N163 DIE

$0.00 (not set)
Rohm Semiconductor

R6011KND3TL1

$0.00 (not set)
Microchip Technology

APT22F80B

$0.00 (not set)
Vishay Siliconix

SIHB5N80AE-GE3

$0.00 (not set)
Alpha & Omega Semiconductor Inc.

AON2409

$0.00 (not set)
Top