IPU50R3K0CEBKMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 500V 1.7A TO251-3
$0.11
Available to order
Reference Price (USD)
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$0.11000
500+
$0.1089
1000+
$0.1078
1500+
$0.1067
2000+
$0.1056
2500+
$0.1045
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IPU50R3K0CEBKMA1
$0.11
Product details
General specs
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500 V
- Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 13V
- Rds On (Max) @ Id, Vgs: 3Ohm @ 400mA, 13V
- Vgs(th) (Max) @ Id: 3.5V @ 30µA
- Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 84 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 18W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO251-3
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
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