IPP50R140CPXKSA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 550V 23A TO220-3
$6.52
Available to order
Reference Price (USD)
1+
$5.26000
10+
$4.72900
100+
$3.93280
500+
$3.24274
1,000+
$2.78271
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Product details
General specs
- Product Status: Not For New Designs
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 550 V
- Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 140mOhm @ 14A, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 930µA
- Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2540 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 192W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220-3-1
- Package / Case: TO-220-3