IPT029N08N5ATMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 80V 52A/169A HSOF-8
$4.53
Available to order
Reference Price (USD)
2,000+
$2.34022
Exquisite packaging
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IPT029N08N5ATMA1
$4.53
Product details
General specs
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80 V
- Current - Continuous Drain (Id) @ 25°C: 52A (Ta), 169A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 2.9mOhm @ 150A, 10V
- Vgs(th) (Max) @ Id: 3.8V @ 108µA
- Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 40 V
- FET Feature: -
- Power Dissipation (Max): 168W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-HSOF-8-1
- Package / Case: 8-PowerSFN
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