IXTT170N10P
IXYS
IXYS
MOSFET N-CH 100V 170A TO268
$12.05
Available to order
Reference Price (USD)
1+
$9.38000
30+
$7.68767
Exquisite packaging
Discount
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| EMS | 3-7 days |
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IXTT170N10P
$12.05
Product details
General specs
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 9mOhm @ 500mA, 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 198 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 715W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-268AA
- Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
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