IPS65R1K4C6AKMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 650V 3.2A TO251-3
$0.69
Available to order
Reference Price (USD)
1+
$1.06000
10+
$0.93600
100+
$0.73950
500+
$0.57350
1,000+
$0.45276
Exquisite packaging
Discount
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| TNT | 2-6 days |
| EMS | 3-7 days |
Infineon Technologies IPS65R1K4C6AKMA1 is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
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IPS65R1K4C6AKMA1
$0.69
Product details
General specs
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1A, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 28W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO251-3-11
- Package / Case: TO-251-3 Stub Leads, IPak
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