SSM3J353F,LF
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
MOSFET P-CH 30V 2A S-MINI
$0.51
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Reference Price (USD)
3,000+
$0.08600
6,000+
$0.07740
15,000+
$0.06880
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$0.06450
75,000+
$0.06020
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SSM3J353F,LF
$0.51
Product details
General specs
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
- Rds On (Max) @ Id, Vgs: 150mOhm @ 2A, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 3.4 nC @ 4.5 V
- Vgs (Max): +20V, -25V
- Input Capacitance (Ciss) (Max) @ Vds: 159 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 600mW (Ta)
- Operating Temperature: 150°C
- Mounting Type: Surface Mount
- Supplier Device Package: S-Mini
- Package / Case: TO-236-3, SC-59, SOT-23-3
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