Shopping cart

Subtotal: $0.00

IPS60R1K0PFD7SAKMA1

Infineon Technologies
IPS60R1K0PFD7SAKMA1 Preview
Infineon Technologies
MOSFET N-CH 650V 4.7A TO251-3
$1.02
Available to order
Reference Price (USD)
1+
$1.02000
500+
$1.0098
1000+
$0.9996
1500+
$0.9894
2000+
$0.9792
2500+
$0.969
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

DHL / Fedex / UPS 2-5 days
TNT 2-6 days
EMS 3-7 days

Infineon Technologies IPS60R1K0PFD7SAKMA1 is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

Experience hassle-free transactions with our flexible payment options and credit facilities. Learn more about the various payment methods accepted, installment plans, and any exclusive credit offers available to make your shopping experience seamless.
IPS60R1K0PFD7SAKMA1

IPS60R1K0PFD7SAKMA1

$1.02

Product details

The IPS60R1K0PFD7SAKMA1 single MOSFET from Infineon Technologies represents the pinnacle of Discrete Semiconductor Products in the Transistors - FETs, MOSFETs - Single category. Engineered for precision and reliability, this component offers outstanding electrical characteristics that benefit a wide range of electronic applications. Its advanced semiconductor technology ensures minimal conduction losses and efficient heat dissipation, critical factors in power-sensitive designs. The IPS60R1K0PFD7SAKMA1 features an optimized package design that enhances thermal performance while maintaining a compact footprint. Key benefits include improved switching efficiency, better load handling capacity, and enhanced protection against voltage spikes. These attributes make it indispensable for electric vehicle charging systems, uninterruptible power supplies, and industrial motor drives. In the consumer sector, it excels in high-efficiency adapters, laptop power systems, and advanced lighting solutions. The component's reliability also makes it suitable for critical infrastructure applications like data center power distribution and emergency backup systems. For design engineers seeking a MOSFET that combines performance with durability, the IPS60R1K0PFD7SAKMA1 delivers on all fronts. Take the next step in your project development use our online inquiry form to request detailed specifications and purchasing information today.

General specs

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 1Ohm @ 1A, 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 50µA
  • Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 400 V
  • FET Feature: -
  • Power Dissipation (Max): 26W (Tc)
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO251-3
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA

Viewed products

Rohm Semiconductor

RQ5H025TNTL

$0.00 (not set)
Diodes Incorporated

DMN3026LVT-7

$0.00 (not set)
STMicroelectronics

STI21N65M5

$0.00 (not set)
onsemi

HUF76429S3ST

$0.00 (not set)
onsemi

FCH190N65F-F155

$0.00 (not set)
onsemi

FDD5N50NZFTM

$0.00 (not set)
Nexperia USA Inc.

BUK7S1R0-40HJ

$0.00 (not set)
Toshiba Semiconductor and Storage

TK14A55D(STA4,Q,M)

$0.00 (not set)
GeneSiC Semiconductor

GA10SICP12-263

$0.00 (not set)
Diodes Incorporated

DMTH3002LK3-13

$0.00 (not set)
Top