GA10SICP12-263
GeneSiC Semiconductor
GeneSiC Semiconductor
TRANS SJT 1200V 25A D2PAK
$29.68
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Reference Price (USD)
500+
$27.91740
Exquisite packaging
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GeneSiC Semiconductor GA10SICP12-263 is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
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GA10SICP12-263
$29.68
Product details
GeneSiC Semiconductor's GA10SICP12-263 stands out in the Discrete Semiconductor Products market as a top-tier single MOSFET transistor in the Transistors - FETs, MOSFETs - Single segment. This component combines cutting-edge semiconductor technology with practical design features for superior electrical performance. The GA10SICP12-263 demonstrates exceptional characteristics including low gate charge, excellent switching behavior, and reliable overcurrent protection. These features translate to reduced power losses and extended device lifespan in your applications. The transistor's robust construction ensures stable operation in challenging environmental conditions, from temperature extremes to mechanical stress. Industrial engineers will appreciate its versatility in robotics control systems, welding equipment, and power tool applications. For consumer electronics, it's perfect for high-end audio systems, gaming consoles, and smart home devices. The GA10SICP12-263 also performs exceptionally in renewable energy applications such as solar inverters and wind turbine controls. With its balanced performance metrics, this MOSFET provides the ideal solution for your power management needs. Ready to incorporate this high-quality component into your designs? Submit your inquiry through our user-friendly online platform for quick response and competitive pricing options.
General specs
- Product Status: Active
- FET Type: -
- Technology: SiC (Silicon Carbide Junction Transistor)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: 100mOhm @ 10A
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): -
- Input Capacitance (Ciss) (Max) @ Vds: 1403 pF @ 800 V
- FET Feature: -
- Power Dissipation (Max): 170W (Tc)
- Operating Temperature: 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263-7
- Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
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