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IPP80R1K4P7XKSA1

Infineon Technologies
IPP80R1K4P7XKSA1 Preview
Infineon Technologies
MOSFET N-CH 800V 4A TO220-3
$1.90
Available to order
Reference Price (USD)
1+
$1.45000
10+
$1.28300
100+
$1.01360
500+
$0.78604
1,000+
$0.62057
Exquisite packaging
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Infineon Technologies IPP80R1K4P7XKSA1 is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

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IPP80R1K4P7XKSA1

IPP80R1K4P7XKSA1

$1.90

Product details

General specs

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800 V
  • Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1.4A, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 70µA
  • Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 500 V
  • FET Feature: Super Junction
  • Power Dissipation (Max): 32W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO220-3
  • Package / Case: TO-220-3

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