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IXTY18P10T

IXYS
IXTY18P10T Preview
IXYS
MOSFET P-CH 100V 18A TO252
$3.93
Available to order
Reference Price (USD)
1+
$3.01000
70+
$2.42500
140+
$2.18250
560+
$1.69750
1,050+
$1.40650
2,520+
$1.35800
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IXTY18P10T

IXTY18P10T

$3.93

Product details

General specs

  • Product Status: Active
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 120mOhm @ 9A, 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
  • Vgs (Max): ±15V
  • Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
  • FET Feature: -
  • Power Dissipation (Max): 83W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252AA
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

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