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IPP110N20N3GXKSA1

Infineon Technologies
IPP110N20N3GXKSA1 Preview
Infineon Technologies
MOSFET N-CH 200V 88A TO220-3
$9.34
Available to order
Reference Price (USD)
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$7.11000
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$6.40000
100+
$5.26250
500+
$4.40914
1,000+
$3.84021
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IPP110N20N3GXKSA1

IPP110N20N3GXKSA1

$9.34

Product details

General specs

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200 V
  • Current - Continuous Drain (Id) @ 25°C: 88A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 11mOhm @ 88A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 270µA
  • Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 7100 pF @ 100 V
  • FET Feature: -
  • Power Dissipation (Max): 300W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO220-3
  • Package / Case: TO-220-3

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