R6009JNJGTL
Rohm Semiconductor
Rohm Semiconductor
MOSFET N-CH 600V 9A LPTS
$3.05
Available to order
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$2.989
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R6009JNJGTL
$3.05
Product details
General specs
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 15V
- Rds On (Max) @ Id, Vgs: 585mOhm @ 4.5A, 15V
- Vgs(th) (Max) @ Id: 7V @ 1.38mA
- Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 15 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 645 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 125W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: LPTS
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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