IPP020N06NAKSA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 60V 29A/120A TO220-3
$5.23
Available to order
Reference Price (USD)
1+
$4.61000
10+
$4.11400
100+
$3.37350
500+
$2.73170
1,000+
$2.30384
Exquisite packaging
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| EMS | 3-7 days |
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IPP020N06NAKSA1
$5.23
Product details
General specs
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 2mOhm @ 100A, 10V
- Vgs(th) (Max) @ Id: 2.8V @ 143µA
- Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 7800 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 3W (Ta), 214W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220-3
- Package / Case: TO-220-3
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