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IPB45P03P4L11ATMA1

Infineon Technologies
IPB45P03P4L11ATMA1 Preview
Infineon Technologies
MOSFET P-CH 30V 45A TO263-3
$1.40
Available to order
Reference Price (USD)
1,000+
$0.77831
Exquisite packaging
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IPB45P03P4L11ATMA1

IPB45P03P4L11ATMA1

$1.40

Product details

Enhance your electronic designs with the IPB45P03P4L11ATMA1 single MOSFET transistor from Infineon Technologies, a premium Discrete Semiconductor Product in the Transistors - FETs, MOSFETs - Single classification. This power-efficient component excels in switching applications, delivering robust performance with minimal energy loss. The IPB45P03P4L11ATMA1 features an optimized gate drive characteristic that ensures smooth operation across various voltage ranges. Its compact design doesn't compromise on power handling capabilities, making it suitable for space-constrained applications. Notable advantages include superior noise immunity, stable operation under varying load conditions, and enhanced electrostatic discharge protection. These qualities make the IPB45P03P4L11ATMA1 particularly valuable for medical equipment, telecommunications infrastructure, and aerospace electronics. Implement this MOSFET in your next project involving DC-DC converters, load switches, or power distribution systems. The component's reliability and efficiency will significantly improve your system's overall performance. For engineers seeking quality MOSFET solutions, the IPB45P03P4L11ATMA1 represents an excellent choice. Visit our website to request a quote or submit your inquiry directly through our online portal for prompt assistance.

General specs

  • Product Status: Not For New Designs
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 10.8mOhm @ 45A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 85µA
  • Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
  • Vgs (Max): +5V, -16V
  • Input Capacitance (Ciss) (Max) @ Vds: 3770 pF @ 25 V
  • FET Feature: -
  • Power Dissipation (Max): 58W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO263-3-2
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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