IPL65R650C6SATMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 650V 6.7A THIN-PAK
$1.24
Available to order
Reference Price (USD)
5,000+
$0.71307
Exquisite packaging
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| EMS | 3-7 days |
Infineon Technologies IPL65R650C6SATMA1 is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
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IPL65R650C6SATMA1
$1.24
Product details
General specs
- Product Status: Not For New Designs
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 6.7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 650mOhm @ 2.1A, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 210µA
- Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 56.8W (Tc)
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TSON-8-2
- Package / Case: 8-PowerTDFN
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