IPI045N10N3GXKSA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 100V 100A TO262-3
$4.47
Available to order
Reference Price (USD)
1+
$3.56000
10+
$3.18100
100+
$2.60860
500+
$2.11232
1,000+
$1.78147
Exquisite packaging
Discount
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| EMS | 3-7 days |
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IPI045N10N3GXKSA1
$4.47
Product details
General specs
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 4.5mOhm @ 100A, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 150µA
- Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 8410 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 214W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO262-3
- Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
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