BSS209PWH6327XTSA1
Infineon Technologies
Infineon Technologies
MOSFET P-CH 20V 630MA SOT323-3
$0.42
Available to order
Reference Price (USD)
3,000+
$0.07208
6,000+
$0.06334
15,000+
$0.05459
30,000+
$0.05168
75,000+
$0.04876
150,000+
$0.04293
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BSS209PWH6327XTSA1
$0.42
Product details
General specs
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 630mA (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs: 550mOhm @ 630mA, 4.5V
- Vgs(th) (Max) @ Id: 1.2V @ 3.5µA
- Gate Charge (Qg) (Max) @ Vgs: 1.3 nC @ 4.5 V
- Vgs (Max): ±12V
- Input Capacitance (Ciss) (Max) @ Vds: 115 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 300mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-SOT323
- Package / Case: SC-70, SOT-323
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