IPG20N10S4L22AATMA1
Infineon Technologies
Infineon Technologies
MOSFET 2N-CH 100V 20A TDSON-8
$1.92
Available to order
Reference Price (USD)
5,000+
$0.80538
10,000+
$0.78848
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IPG20N10S4L22AATMA1
$1.92
Product details
Discover the IPG20N10S4L22AATMA1 from Infineon Technologies, a high-efficiency MOSFET array in the Discrete Semiconductor Products category. As part of the Transistors - FETs, MOSFETs - Arrays subcategory, this product is engineered for applications demanding high power density and reliability. Its advanced design ensures optimal performance in a wide range of electronic systems.\n\nThe IPG20N10S4L22AATMA1 features low on-resistance, fast switching characteristics, and excellent thermal stability. The array format simplifies circuit design by consolidating multiple FETs, reducing board space and improving system efficiency. With superior electrical performance, it meets the needs of high-performance applications.\n\nCommon uses include server power supplies, electric vehicle charging stations, and medical equipment. Server power supplies benefit from its high efficiency and reliability. EV charging stations utilize its robust performance for safe and fast charging. Medical equipment relies on its precision and durability for critical operations.\n\nGet started with the IPG20N10S4L22AATMA1 today. Request a quote to explore how this MOSFET array can meet your project requirements. Our support team is here to assist you every step of the way.
General specs
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 20A
- Rds On (Max) @ Id, Vgs: 22mOhm @ 17A, 10V
- Vgs(th) (Max) @ Id: 2.1V @ 25µA
- Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1755pF @ 25V
- Power - Max: 60W
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount, Wettable Flank
- Package / Case: 8-PowerVDFN
- Supplier Device Package: PG-TDSON-8-10
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