MSCSM120AM31CT1AG
Microchip Technology
Microchip Technology
PM-MOSFET-SIC-SBD~-SP1F
$134.02
Available to order
Reference Price (USD)
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$134.02000
500+
$132.6798
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$131.3396
1500+
$129.9994
2000+
$128.6592
2500+
$127.319
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MSCSM120AM31CT1AG
$134.02
Product details
Introducing the MSCSM120AM31CT1AG from Microchip Technology, a high-performance MOSFET array in the Discrete Semiconductor Products category. Part of the Transistors - FETs, MOSFETs - Arrays subcategory, this product is designed for applications requiring robust power handling and efficient switching.\n\nThe MSCSM120AM31CT1AG offers features such as low gate charge, high current capability, and excellent thermal performance. The array format integrates multiple transistors, simplifying design and reducing component count. Its reliable construction ensures consistent operation in demanding environments.\n\nThis MOSFET array is widely used in home appliances, industrial drives, and telecommunications. Home appliances benefit from its energy efficiency and durability. Industrial drives utilize its high power handling for motor control. Telecommunications equipment relies on its fast switching for signal processing.\n\nReady to incorporate the MSCSM120AM31CT1AG into your projects? Submit an inquiry to get started. Our team is here to provide the support and information you need.
General specs
- Product Status: Active
- FET Type: 2 N Channel (Phase Leg)
- FET Feature: Silicon Carbide (SiC)
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 89A (Tc)
- Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V
- Vgs(th) (Max) @ Id: 2.8V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 232nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 3020pF @ 1000V
- Power - Max: 395W (Tc)
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: SP1F
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