MSCSM120AM31CT1AG
Microchip Technology
Microchip Technology
PM-MOSFET-SIC-SBD~-SP1F
$134.02
Available to order
Reference Price (USD)
1+
$134.02000
500+
$132.6798
1000+
$131.3396
1500+
$129.9994
2000+
$128.6592
2500+
$127.319
Exquisite packaging
Discount
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| EMS | 3-7 days |
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MSCSM120AM31CT1AG
$134.02
Product details
General specs
- Product Status: Active
- FET Type: 2 N Channel (Phase Leg)
- FET Feature: Silicon Carbide (SiC)
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 89A (Tc)
- Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V
- Vgs(th) (Max) @ Id: 2.8V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 232nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 3020pF @ 1000V
- Power - Max: 395W (Tc)
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: SP1F
