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IPD60R1K0CEAUMA1

Infineon Technologies
IPD60R1K0CEAUMA1 Preview
Infineon Technologies
CONSUMER
$1.00
Available to order
Reference Price (USD)
2,500+
$0.27817
Exquisite packaging
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IPD60R1K0CEAUMA1

IPD60R1K0CEAUMA1

$1.00

Product details

General specs

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 1Ohm @ 1.5A, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 130µA
  • Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 100 V
  • FET Feature: -
  • Power Dissipation (Max): 61W (Tc)
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO252-3-344
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

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