IPD088N06N3GBTMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 60V 50A TO252-3
$1.07
Available to order
Reference Price (USD)
2,500+
$0.44275
5,000+
$0.42061
12,500+
$0.40480
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IPD088N06N3GBTMA1
$1.07
Product details
General specs
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 8.8mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id: 4V @ 34µA
- Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 71W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO252-3
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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